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A Product Line of
Diodes Incorporated
ZXMP4A57E6
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-40
?
?
?
?
?
?
-0.5
? 100
V
μA
nA
I D = -250μA, V GS = 0V
V DS = -40V, V GS = 0V
V GS = ? 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Notes 9 & 10)
Diode Forward Voltage (Note 9)
Reverse recovery time (Note 10)
Reverse recovery charge (Note 10)
V GS(th)
R DS(ON)
g fs
V SD
t rr
Q rr
-1.0
?
?
?
?
??
?
?
?
?
7.6
-0.86
17.4
11.1
-3.0
0.080
0.150
?
-0.95
?
?
V
?
S
V
ns
nC
I D = -250μA, V DS = V GS
V GS = -10V, I D = -4A
V GS = -4.5V, I D = -2A
V DS = -15V, I D = -4A
I S = -4A, V GS = 0V
I S = -1.8A, di/dt = 100A/μs
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
C iss
C oss
C rss
Q g
?
?
?
??
833
122
78
7
?
?
?
??
pF
V DS = -20V, V GS = 0V
f = 1MHz
V GS = -4.5V
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Q g
Q gs
?
?
15.8
3.6
?
?
nC
V GS = -10V
V DS = -20V
I D = -4A
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Q gd
t D(on)
?
?
2.7
2.5
?
?
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
t r
t D(off)
t f
?
?
?
3.3
47
21
?
?
?
ns
V DD = -20V, V GS = -10V
I D = -1A, R G ? 6.0 ?
Notes:
9. Measured under pulsed conditions. Pulse width ? 300μs; duty cycle ? 2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
ZXMP4A57E6
Document Number DS35238 Rev. 1 - 2
4 of 8
www.diodes.com
July 2013
? Diodes Incorporated
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